威科赛乐微电子股份有限公司

Gallium Arsenide Substrates

We provide GaAs substrates with a maximum size of 6 inches, grown using VGF technology, including semi-insulating GaAs wafers (un-doped) and semi-conducting GaAs wafers (Si or Zn doped).
Gallium Arsenide (GaAs) is an excellent semiconductor material with direct band gap, high electron mobility, high-frequency and low noise, and high conversion efficiency. Gallium Arsenide is widely used in optoelectronic and microelectronic industries.

Item	Unit	LD Applications Specifications	LED Applications Specifications	Microelectronics Specifications
Conduction Type		N-type	P-type/N-type
Crystal Growth Method		VGF	VGF	VGF
Dopant		Si	Zn/Si	Undoped
Diameter	inch	2",3",4" and 6"	2",3",4" and 6"	2",3",4" and 6"
Wafer Orientation*		(100)±0.1°	(100)±0.5°	(100)±0.5°
OF/IF		US or EJ	US or EJ	US, EJ or notch
Carrier Concentration	/cm³	(0.4-2.5) ×10¹⁸	(0.5-5) ×10¹⁹ (0.4-4)×10¹⁸
Resistivity	ohm.cm	(1.2-9.9) ×10^-3	(1.2-9.9)×10^-3	>10⁷
Mobility	cm²/v.s	>1500	50-120/>1000	>4000
Etch Pit Density	/cm²	<500	<5000	<5000
Laser Marking		Upon request	Upon request	Upon request
Thickness*	μm	(350-650)±25	(350-650)±25	(350-650)±25
TTV(P/P)	μm	≤5	≤5	≤4
TTV(P/E)	μm	≤10	≤10	≤10
Warp	μm	≤10	≤10	≤10
Surface	Side 1 Side 2	Polished Polished/Etched	Polished Polished/Etched	Polished Polished/Etched
Epi-ready		Yes	Yes	Yes
Package		Cassette or single wafer container	Cassette or single wafer container	Cassette or single wafer container

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